CHIEW RUI LOON (TP037116)
DESIGN OF A TRANSFORMERLESS PHOTOVOLTAIC INVERTER USING SILICON CARBIDE MOSFET / CHIEW RUI LOON. - Kuala Lumpur : Asia Pacific University, 2019. - xii, 65 pages : illustrations ; 30 cm.
A project submitted in partial fulfillment of the requirement of Asia Pacific University of Technology and Innovation for the degree of B.Eng (Hons) in Electrical and Electronic Engineering (APU4F1903EEE).
The main aim of this project is to develop a transformer-less photovoltaic inverter using Silicon Carbide (SiC) MOSFET. In this proposed method, a circuit model using MATLAB Simulink PLECS Blockset, was developed to demonstrate the proposed system. HERIC topology had been chosen to replace the IGBT with SiC MOSFET. The performance of the developed proposed system is evaluated by comparing the theoretical results and the simulated results. It is observed that the losses such as the switching loss and conduction loss of the SiC MOSFET are much lower that the conventional IGBT. The THD of the grid current also reduced when SiC MOSFET is able to switch in high frequency. The size of filter inductor also reduced when the system is able to operate in high frequency. The size of the overall inverter also reduced.
Metal oxide semiconductor field-effect transistors.
Photovoltaic power systems.
Electric inverters.
PG-22-0061
DESIGN OF A TRANSFORMERLESS PHOTOVOLTAIC INVERTER USING SILICON CARBIDE MOSFET / CHIEW RUI LOON. - Kuala Lumpur : Asia Pacific University, 2019. - xii, 65 pages : illustrations ; 30 cm.
A project submitted in partial fulfillment of the requirement of Asia Pacific University of Technology and Innovation for the degree of B.Eng (Hons) in Electrical and Electronic Engineering (APU4F1903EEE).
The main aim of this project is to develop a transformer-less photovoltaic inverter using Silicon Carbide (SiC) MOSFET. In this proposed method, a circuit model using MATLAB Simulink PLECS Blockset, was developed to demonstrate the proposed system. HERIC topology had been chosen to replace the IGBT with SiC MOSFET. The performance of the developed proposed system is evaluated by comparing the theoretical results and the simulated results. It is observed that the losses such as the switching loss and conduction loss of the SiC MOSFET are much lower that the conventional IGBT. The THD of the grid current also reduced when SiC MOSFET is able to switch in high frequency. The size of filter inductor also reduced when the system is able to operate in high frequency. The size of the overall inverter also reduced.
Metal oxide semiconductor field-effect transistors.
Photovoltaic power systems.
Electric inverters.
PG-22-0061