000 01476nam a2200385 a 4500
001 b26497712
003 APU
005 20150820155231.0
007 cr cnu---
008 051205r2005 caua sb 000 0 eng d
020 _a9781598293548 (hbk.)
020 _a1598290045 (hbk.)
035 _a62458047
040 _aWAU
_beng
_cWAU
_dSARA
_dWAN
050 0 0 _aQC585
_b.K56 2005
082 0 0 _221
_a537.24
_bKIM 2005
100 1 _aKim, Young-Hee,
_d1972-
_916290
245 1 0 _aHf-based high-k dielectrics :
_bprocess development, performance characterization, and reliability /
_cYoung-Hee Kim, Jack C. Lee.
260 _aSan Rafael, Calif. :
_bMorgan & Claypool Publishers,
_cc2005.
300 _ax, 92 p. :
_bill. ;
_c24 cm.
500 _aTitle from PDF t.p. (viewed on Dec. 2, 2005)
504 _aIncludes bibliographical references.
506 _aOnline version restricted to NUS staff and students only through NUSNET.
538 _aMode of access: World Wide Web.
538 _aSystem requirements: Internet connectivity; World Wide Web browser.
650 0 _aDielectrics.
_916291
650 0 _aHafnium oxide.
_916292
650 0 _aIntegrated circuits
_xReliability.
_916293
650 0 _aSemiconductors
_xJunctions.
_916294
650 0 _aBreakdown (Electricity)
_916295
650 0 _aMetal oxide semiconductor field-effect transistors.
_916296
700 1 _aLee, Jack Chung-Yeung.
_916297
710 2 _aMorgan & Claypool Publishers.
_91634
942 _2lcc
_cBook
999 _c8625
_d8625