000 | 01476nam a2200385 a 4500 | ||
---|---|---|---|
001 | b26497712 | ||
003 | APU | ||
005 | 20150820155231.0 | ||
007 | cr cnu--- | ||
008 | 051205r2005 caua sb 000 0 eng d | ||
020 | _a9781598293548 (hbk.) | ||
020 | _a1598290045 (hbk.) | ||
035 | _a62458047 | ||
040 |
_aWAU _beng _cWAU _dSARA _dWAN |
||
050 | 0 | 0 |
_aQC585 _b.K56 2005 |
082 | 0 | 0 |
_221 _a537.24 _bKIM 2005 |
100 | 1 |
_aKim, Young-Hee, _d1972- _916290 |
|
245 | 1 | 0 |
_aHf-based high-k dielectrics : _bprocess development, performance characterization, and reliability / _cYoung-Hee Kim, Jack C. Lee. |
260 |
_aSan Rafael, Calif. : _bMorgan & Claypool Publishers, _cc2005. |
||
300 |
_ax, 92 p. : _bill. ; _c24 cm. |
||
500 | _aTitle from PDF t.p. (viewed on Dec. 2, 2005) | ||
504 | _aIncludes bibliographical references. | ||
506 | _aOnline version restricted to NUS staff and students only through NUSNET. | ||
538 | _aMode of access: World Wide Web. | ||
538 | _aSystem requirements: Internet connectivity; World Wide Web browser. | ||
650 | 0 |
_aDielectrics. _916291 |
|
650 | 0 |
_aHafnium oxide. _916292 |
|
650 | 0 |
_aIntegrated circuits _xReliability. _916293 |
|
650 | 0 |
_aSemiconductors _xJunctions. _916294 |
|
650 | 0 |
_aBreakdown (Electricity) _916295 |
|
650 | 0 |
_aMetal oxide semiconductor field-effect transistors. _916296 |
|
700 | 1 |
_aLee, Jack Chung-Yeung. _916297 |
|
710 | 2 |
_aMorgan & Claypool Publishers. _91634 |
|
942 |
_2lcc _cBook |
||
999 |
_c8625 _d8625 |