000 01666cam a22003977a 4500
001 14767934
003 APU
005 20150824142043.0
008 070313s2006 njua b 001 0 eng d
010 _a 2007272569
020 _a9812568352 (hbk.)
020 _a9789812568359 (hbk.)
035 _a(OCoLC)ocm71298024
035 _a(OCoLC)71298024
040 _aAPU
_beng
_cAPU
_dBNF
_dSUE
042 _alccopycat
050 0 0 _aTK7871.15.S56
_bS53 2006 Vol.1
082 0 0 _a621.38152
_222
_bSIC 2006
245 0 0 _aSiC materials and devices.
_nVolume 1 /
_cedited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.
260 _aLondon :
_bWorld Scientific,
_cc2006.
300 _av. 334 p. :
_bill. ;
_c26 cm.
440 0 _aSelected topics in electronics and systems ;
_vv. 40
_917616
500 _aMaterial reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.
504 _aIncludes bibliographical references.
650 0 _aSilicon carbide
_xElectric properties.
_917617
650 0 _aSemiconductors.
_916310
700 1 _aShur, Michael.
_917618
700 1 _aRumyantsev, Sergey L.
_917619
700 1 _aLevinshteĭn, M. E.
_q(Mikhail Efimovich)
_917620
730 0 2 _aJournal of high speed electronics & systems.
_917621
856 4 1 _3Table of contents only
_uhttp://www.loc.gov/catdir/toc/fy0709/2007272569.html
906 _a7
_bcbc
_ccopycat
_d2
_encip
_f20
_gy-gencatlg
942 _2lcc
_cBook
_01
999 _c9242
_d9242